High brightness Cold Field Emission (Cold FE) electron source
Cold field emission electron source benefits nanoscale analysis with its high brightness and high energy resolution. Its inherent high coherency greatly contributes to ultrahigh resolution imaging and electron holography*.
300kV accelerating voltage
300kV accelerating voltage allows atomic resolution imaging for thick specimens. Metals and ceramics with high atomic numbers are less electron transparent and often need to be observed at 300kV accelerating voltage.
Unique analytical capabilities
Newly introduced spatially resolved EELS* and in situ SEM/TEM imaging* nanobeam electron diffraction provide sophisticated and unique analytical capabilities.
Holder linkage with FIB system*
Hitachi FIB-compatible specimen holder* requires no tweezer handling of TEM grid between FIB fabrication and TEM observation and ensures high sample throughput TEM analysis. Hitachi's unique specimen rotation holder* enables real-time multidirectional structural analysis together with STEM unit*.
User-friendly operation
Windows-based TEM/STEM* computer control, motor-driven movable aperture, and 5-axis motor stage make the high-end TEM more easily to access, 10 minutes high voltage ready and one minute specimen exchange result in high sample throughput for TEM analysis.
*: Optional accessory
*: Windows is a registered trademark of Microsoft Corp., in the U.S. and other countries.
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Items |
Description |
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Electron source |
W(310) cold field emission electron source |
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Accelerating voltage |
300 kV, 200 kV*2, 100 kV*2 |
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Resolution |
Lattice |
0.10 nm |
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Point-to-point |
0.19 nm |
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Information limit |
0.13 nm |
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Magnification |
Low Mag mode |
200 - 500× |
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High Mag mode |
2,000 - 1,500,000× |
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Image rotation |
±5° or less (High Mag mode, below 1,000,000×) |
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Specimen tilt |
±15° |
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Camera length |
300 - 3,000 mm |
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