● Hybrid model : Two milling configurations available
Cross-section milling : smooth polishing of cross-section specimens for high resolution imaging of subsurface structures.
Flatmilling : uniform polishing of surfaces as large as 5 mm with variable angle milling to selectively enhance specimen surface features.
● Higher Throughput : Improved milling efficiency
Reduced cross-sectioning times with new ion gun design compared to previous E-3500 model. (Max.Milling rate: 300 µm/h for Si - 66% reduction
in processing time)
● Removable sample stage unit :
Removable sample stage unit for convenient specimen setting and cutting edge definition
Items |
Description |
|
Cross-section milling holder |
Flatmilling holder |
|
Gas used |
Ar (argon) gas |
|
Accelerating voltage |
0 to 6 kV |
|
Maximum milling rate*1*2(Materials Si) |
Approx. 300 µm/h*1*2 |
Approx. 20 µm/h*3(spot) |
Maximum sample size |
20(W)×12(D)×7(H) mm |
Φ50×25(H) mm |
Sample moving range |
X±7 mm, Y 0 to +3 mm |
X 0 to +5 mm |
Rotation angle |
- |
1 r/m, 25 r/m |
Swing angle |
±15°, ±30°, ±40° |
±60°, ±90° |
Tilt |
- |
0 - 90° |
Gas flow rate control system |
Mass flow controller |
|
Evacuation system |
Turbo-molecular pump (33 L/s) + Rotary Pump(135 L/min at 50 Hz, 162 L/min at 60 Hz) |
|
Dimension |
616(W)×705(D)×312(H) mm |
|
Weight |
Main unit 48 kg+Rotary pump 28 kg |
|
Optional Accessories |
Optical microscope for viewing of the specimen during milling |
*1:This rate is the maximum depth obtained when Si is protruded from a mask edge for processing by 100 µm.
*2:This rate is the average value obtained when Si is processed for two hours.
*3:Illuminating angle : 60° Eccentric value : 4 mm
*4: Illuminating angle : 0° Eccentric value : 0 mm
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