The thickness of the epitaxial layer, substrate, etching (residual layer), liquid crystal cell gap, and other semiconductor layers dramatically impacts semiconductor device performance. Management of layer thickness during the manufacturing process is extremely crucial for production of large yields of stable devices.
JASCO's film-thickness measurement system is a nondestructive, non-contact analysis method using the latest interferometric technology to provide rapid film thickness measurements. Utilizing a proprietary frequency analysis method, the sample interference spectrum is converted to a spatialgram and the film thickness calculated with a high degree of accuracy. This integrated system offers the film thickness measurements required for the exacting standards of the semiconductor industry including high-speed sample mapping; a wide thickness measurement range; and a refined operating environment, supporting a wide range of analysis requirements from process use to R&D. JASCO offers near-infrared and mid-infrared models according to the thickness measurements desired.
Intuitive Software for Film Thickness Measurements
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High Measurement Reproducibility
The following table shows consecutive measurement results for a Silicon epitaxial layer.
The error of 10 consecutive measurements is less than ±0.001 µm. These figures demonstrate the extremely reproducible film thickness measurement capability.
Reproducibility of consecutive measurements |
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Measurement No. | Measured Value (µm) | Devitation (µm) |
1 | 4.9001 | -0.0013 |
2 | 4.9014 | 0.0000 |
3 | 4.9010 | -0.0004 |
4 | 4.9019 | 0.0005 |
5 | 4.9015 | 0.0001 |
6 | 4.9018 | 0.0004 |
7 | 4.9011 | -0.0003 |
8 | 4.9014 | 0.0000 |
9 | 4.9017 | 0.0003 |
10 | 4.9021 | 0.0007 |
Average value (µm): 4.9014 | ||
Standard devitation (µm): 0.0006 |
Measurement method | FT-IR interference method for film thickness measurements |
Measurement configuration | Reflection, Transmission (option) |
Objectives |
Near infrared: Lens objectives (4X) and Cassegrain objectives (15X, 30X) |
Focus mechanism | 11 mm stroke |
Sampling area | 20 x 20 to 1200 x 1200 µm |
Sample positioning | Verification of measurement area using an integrated CCD camera |
Measurement range/accuracy |
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Film thickness | 0.25 to 750 µm (for Si) |
Reproducibility | ±0.005 µm or less (for Si with identical measurements) |
XY stage |
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Stage movement | 200 x 200 mm (Other options available) |
Minimum step size | 2 µmm |
Data processing unit |
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Operating System | Windows 7 Professional |
System control | JASCO Spectra Manager software; Optics and X-Y stage control; Wafer cassette system control (option) |
Table |
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Type | Integrated vibration isolation table |
Dimensions | 1400 x 850 x 1025 mm (excluding protrusions or optional cassette loading system) |
Power requirement | 300 VA |
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