FilmTek 2000 PAR-SE

Spectroscopic reflectometry for thickness measurement of thin to very thick films on micron-sized device features

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FilmTek 2000 PAR-SE

Combining patented Multi-Angle Differential Polarimetry (MADP) and Differential Power Spectral Density (DPSD) technology, the FilmTek™ 2000 PAR-SE utilizes multi-angle and multi-modal data collection to independently measure film thickness and index of refraction. By independently measuring index and thickness, the FilmTek 2000 PAR-SE is far more sensitive to changes in films, particularly films within multi-layer stacks, than existing metrology tools that rely on conventional ellipsometry or reflectometry techniques. The FilmTek 2000 PAR-SE is a fully-integrated package, paired with advanced material modeling software to make even the most rigorous measurement of patterned wafers reliable and intuitive.

Measurement Capabilities

Enables simultaneous determination of:

  • Multiple layer thicknesses
  • Indices of refraction [ n(λ) ]
  • Extinction (absorption) coefficients [ k(λ) ]
  • Energy band gap [ Eg ]
  • Composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.)
  • Surface roughness
  • Constituent, void fraction
  • Crystallinity/Amorphization (e.g., of Poly-Si or GeSbTe films)
  • Film gradient

System Components

Standard:

  • Spectroscopic ellipsometry with rotating compensator design (295 nm – 1700 nm)
  • Multi-angle, polarized spectroscopic reflection (190 nm – 1700 nm)
  • Measures film thickness and index of refraction independently
  • Multi-Angle Differential Polarimetry (MADP) technology with SCI’s patented Differential Power Spectral Density (DPSD) technology
  • Ideal for measuring ultra-thin films (0.03 Å repeatability on native oxide)
  • Camera for imaging measurement location
  • Pattern recognition
  • 50 micron spot size
  • Advanced material modeling software
  • Bruker’s generalized material model with advanced global optimization algorithms

Optional:

  • Generalized ellipsometry (4×4 matrix generalization method) for anisotropy measurements (nx, ny, nz)
  • Cassette to cassette wafer handling
  • FOUP and SMIF compatible
  • Pattern recognition (Cognex)
  • SECS/GEM