Nion ULTRASTEM

Atomic-resolution 4D imaging and elemental mapping of materials
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  • Operating voltage from 30 to 200 kV
  • Open-source Python-powered control software
  • High-brightness/high-stability cold field emission electron gun (CFEG)
  • High-performance C3/C5 aberration correction
  • Ultra-high vacuum at the sample
  • 4D-STEM capability

Annular dark field (ADF) image of monolayer boron nitride containing atomic substitutions.

Annular dark field (ADF) image of monolayer boron nitride containing atomic substitutions. Quantitative analysis of the image produced a detailed atomic model, which is shown superimposed on the image. Boron atoms are shown red, carbon atoms yellow, nitrogen atoms green and oxygen atoms blue. (Graphic courtesy Tim Pennycook, ORNL & Vanderbilt U.)

Nion ULTRASTEM Specifications

Feature Benefit
>1 nA current in a 2 Å probe Rapid atomic-resolution Electron Energy Loss Spectroscopy (EELS) elemental mapping
0.8 Å high angle annular dark field (HAADF) resolution Resolve fine spacings and single atoms
Correction of all fifth-order axial aberrations Larger probe angles, higher beam current
Every operation can be performed remotely Remote operation with no local assistance
Friction-free, centro-symmetric sample stage Ultra-precise sample motion, freedom from drift
Double tilt sample holder using ball bearings Backlash-free, ultra-precise tilting
Fast electrostatic beam blanker Avoids sample damage when not collecting data
5th-order-corrected EELS optics >50 mr acceptance semi-angles, more efficient analysis
Microscope column is entirely ion-pumped Minimizes sample contamination and etching
Column uses only metal vacuum seals Sample vacuum typically <1×10-9 torr
Whole column bakeable to 140°C Eliminates microscope-caused contamination
Double μ-metal shielding of entire column Minimizes sensitivity to stray AC fields
Completely modular construction Customization of the microscope column is possible
Self-diagnosing electronics Rapid remote servicing